ISC015N06NM5LF2ATMA1 vs IQE220N15NM5ATMA1 Perbandingan
Perbandingan bersamaan detil ISC015N06NM5LF2ATMA1 dari Infineon dan IQE220N15NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC015N06NM5LF2ATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 32 A | 7 A |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 3 W | 2.5 W |
| Power Dissipation (PD) at Tc | 217 W | 100 W |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ | — |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3 V | 4.6 V (typ at 46 µA) |
| Gate-Source Voltage Rating | ±20 V | — |
| Reverse Recovery Charge (Qrr) | 1.3 nC | — |
| Input Capacitance (Ciss) | 6.9 nF | 14 pF |
| Output Capacitance (Coss) | 1.3 nF | 340 pF |
| Reverse Transfer Capacitance (Crss) | 55 pF | — |
| Total Gate Charge (Qg) | 90 nC | 14.4 nC at 10 V |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TDSON-8 FL (5x6 mm) | PG-TSON-8-5 (Source-Down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| RDS(on) Max at VGS=10V | — | 22 mΩ |
| Konfigurasi Output | — | Single N-Channel |
| Suhu Kerja | — | -55C to +150C (junction) |
| Status RoHS | — | Compliant |
| Level MSL | — | 1 |