ISC024N08NM7ATMA1 vs ISC011N04NM7VATMA1 Perbandingan
Perbandingan bersamaan detil ISC024N08NM7ATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC024N08NM7ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) at Ta=25C | 24 A | — |
| Continuous Drain Current (Id) at Tc | 167 A | — |
| Power Dissipation (Pd) at Ta=25C | 3 W | — |
| Power Dissipation (Pd) at Tc | 150 W | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket / Case | PG-TDSON-8 (SSO8) | — |
| Rentang Suhu Kerja | -55 C to +175 C | -55 °C to +175 °C (TJ) |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) typical value] | — |
| Total Gate Charge Qg (typ) | [DATA_NEEDED: total gate charge] | — |
| Status RoHS | Compliant | — |
| Bebas Halogen | Yes | — |
| Level MSL | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Technology | OptiMOS 7 trench MOSFET | Trench MOSFET, silicon |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Paket | — | PG-TDSON-8 (source-down) |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |