ISC024N08NM7ATMA1 vs ISC011N04NM7VATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC024N08NM7ATMA1 sa pamamagitan ng Infineon at ISC011N04NM7VATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC024N08NM7ATMA1 - 80V OptiMOS 7 N-Channel MOSFET | Infineon
ISC024N08NM7ATMA1 ✓ NakahandaInfineon
ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC024N08NM7ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) at Ta=25C | 24 A | — |
| Continuous Drain Current (Id) at Tc | 167 A | — |
| Power Dissipation (Pd) at Ta=25C | 3 W | — |
| Power Dissipation (Pd) at Tc | 150 W | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging / Kaso | PG-TDSON-8 (SSO8) | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55 °C to +175 °C (TJ) |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) typical value] | — |
| Total Gate Charge Qg (typ) | [DATA_NEEDED: total gate charge] | — |
| Tindminan RoHS | Compliant | — |
| Wala sa Halogen | Yes | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Technology | OptiMOS 7 trench MOSFET | Trench MOSFET, silicon |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Packhaging | — | PG-TDSON-8 (source-down) |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |