ISC024N08NM7ATMA1 vs ISC011N04NM7VATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC024N08NM7ATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC024N08NM7ATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) at Ta=25C 24 A —
Continuous Drain Current (Id) at Tc 167 A —
Power Dissipation (Pd) at Ta=25C 3 W —
Power Dissipation (Pd) at Tc 150 W —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan / Case PG-TDSON-8 (SSO8) —
Gambaran Suhu Operasi -55 C to +175 C -55 °C to +175 °C (TJ)
Gate Threshold Voltage (typ) [DATA_NEEDED: gate threshold voltage] —
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) typical value] —
Total Gate Charge Qg (typ) [DATA_NEEDED: total gate charge] —
Status RoHS Compliant —
Boson Bebas Yes —
Aras MSL 1 (per JEDEC J-STD-020) MSL 1 (per JEDEC J-STD-020)
Technology OptiMOS 7 trench MOSFET Trench MOSFET, silicon
Product Family — OptiMOS 7 Power-Transistor
FET Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Kemasan — PG-TDSON-8 (source-down)
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)

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