ISC078N12NM6ATMA1 vs ISC028N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISC078N12NM6ATMA1 dari Infineon dan ISC028N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC078N12NM6ATMA1 ISC028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 OptiMOS 5 30V
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) at Tc 85 A —
Continuous Drain Current (ID) at Ta 13.2 A —
On-Resistance RDS(on) typ at VGS=10V 7.8 mΩ —
Power Dissipation at Tc 125 W —
Power Dissipation at Ta 3 W —
Paket SuperSO8 (TDSON-8) PG-TDSON-8-62 (5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (junction) —
Jumlah Pin 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] —
Status RoHS Compliant —
Level MSL 1 1 (per JEDEC J-STD-020)
Lead-Free Yes —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Suhu Hubung Kerja — -55 C to +175 C
RoHS / Lead-Free — Yes (RoHS compliant)

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