ISC078N12NM6ATMA1 vs ISC028N03LF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC078N12NM6ATMA1 disebabkan oleh Infineon dan ISC028N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC078N12NM6ATMA1 ISC028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 OptiMOS 5 30V
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) at Tc 85 A —
Continuous Drain Current (ID) at Ta 13.2 A —
On-Resistance RDS(on) typ at VGS=10V 7.8 mΩ —
Power Dissipation at Tc 125 W —
Power Dissipation at Ta 3 W —
Kemasan SuperSO8 (TDSON-8) PG-TDSON-8-62 (5x6 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (junction) —
Kiraan Pin 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] —
Status RoHS Compliant —
Aras MSL 1 1 (per JEDEC J-STD-020)
Lead-Free Yes —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Suhu Hubungan Operasi — -55 C to +175 C
RoHS / Lead-Free — Yes (RoHS compliant)

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