ISC078N12NM6ATMA1 vs ISC028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC078N12NM6ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC078N12NM6ATMA1 - 120V 85A N-Ch MOSFET 7.8mΞ© SuperSO8 | Infineon
ISC078N12NM6ATMA1 β ActiveInfineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC078N12NM6ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 30V |
| Technology | N-Channel Trench MOSFET | β |
| Drain-Source Voltage (VDS) | 120 V | β |
| Continuous Drain Current (ID) at Tc | 85 A | β |
| Continuous Drain Current (ID) at Ta | 13.2 A | β |
| On-Resistance RDS(on) typ at VGS=10V | 7.8 mΞ© | β |
| Power Dissipation at Tc | 125 W | β |
| Power Dissipation at Ta | 3 W | β |
| Package | SuperSO8 (TDSON-8) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Lead-Free | Yes | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 128 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 2.35 V |
| Power Dissipation at TA | β | 3 W |
| Power Dissipation at TC | β | 83 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| RoHS / Lead-Free | β | Yes (RoHS compliant) |