ISC151N08NM6ATMA1 vs IPB051N15NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC151N08NM6ATMA1 dari Infineon dan IPB051N15NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC151N08NM6ATMA1 | IPB051N15NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 150 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Arus Alir Berlanjut (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | — |
| Paket | PG-TDSON-8 FL | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Channel Mode | Enhancement | — |
| Suhu Kerja | -55 °C to +175 °C | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Continuous Drain Current (ID) at TC=25C | — | 139 A |
| RDS(on) Typical at VGS=10 V | — | 5.1 mOhm |
| Gate Charge (Qg) Typical | — | 51 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 234 W |
| Rentang Suhu Kerja | — | -55C to +175C |
| Paket / Case | — | PG-TO263-3-2 (D2PAK) |
| Jumlah Pin | — | 3 (Drain, Source, Gate) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes |