ISC151N08NM6ATMA1 vs IPB051N15NM6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC151N08NM6ATMA1 sa pamamagitan ng Infineon at IPB051N15NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC151N08NM6ATMA1 IPB051N15NM6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V 150 V
Continuous Drain Current (TA=25°C) 9.2 A —
Patuloy na Drain Current (TC=25°C) 37 A —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 48 W —
On-Resistance RDS(on) max 15.1 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V —
Technology OptiMOS 6 —
Packhaging PG-TDSON-8 FL —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pins 8 —
Channel Mode Enhancement —
Temperature na Operasyon -55 °C to +175 °C —
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 6
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 18 A
Continuous Drain Current (ID) at TC=25C — 139 A
RDS(on) Typical at VGS=10 V — 5.1 mOhm
Gate Charge (Qg) Typical — 51 nC
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 234 W
Hanay ng Temperature na Operasyon — -55C to +175C
Packhaging / Kaso — PG-TO263-3-2 (D2PAK)
Bilang ng Pin — 3 (Drain, Source, Gate)
Level ng MSL — 1 (per JEDEC J-STD-020)
Avalanche Rated — Yes

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