ISC151N08NM6ATMA1 vs IPB051N15NM6ATMA1 比較
詳細並排比較 ISC151N08NM6ATMA1 由 Infineon 與 IPB051N15NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 ✓ 啟用中規格比較
| 參數 | ISC151N08NM6ATMA1 | IPB051N15NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 150 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| 連續汲極電流 (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | — |
| 封裝 | PG-TDSON-8 FL | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| Channel Mode | Enhancement | — |
| 工作溫度 | -55 °C to +175 °C | — |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Continuous Drain Current (ID) at TC=25C | — | 139 A |
| RDS(on) Typical at VGS=10 V | — | 5.1 mOhm |
| Gate Charge (Qg) Typical | — | 51 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 234 W |
| 工作溫度範圍 | — | -55C to +175C |
| 封裝 / 外殼 | — | PG-TO263-3-2 (D2PAK) |
| 腳位數 | — | 3 (Drain, Source, Gate) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes |