ISC151N08NM6ATMA1 vs IPB051N15NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC151N08NM6ATMA1 disebabkan oleh Infineon dan IPB051N15NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC151N08NM6ATMA1 | IPB051N15NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 150 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Arus Kumpal Tetap (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | — |
| Kemasan | PG-TDSON-8 FL | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 8 | — |
| Channel Mode | Enhancement | — |
| Suhu Operasi | -55 °C to +175 °C | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Continuous Drain Current (ID) at TC=25C | — | 139 A |
| RDS(on) Typical at VGS=10 V | — | 5.1 mOhm |
| Gate Charge (Qg) Typical | — | 51 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 234 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Kemasan / Case | — | PG-TO263-3-2 (D2PAK) |
| Kiraan Pin | — | 3 (Drain, Source, Gate) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes |