ISC300N20NM6ATMA1 vs ISC011N04NM7VATMA1 Perbandingan
Perbandingan bersamaan detil ISC300N20NM6ATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon
ISC300N20NM6ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC300N20NM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 200V | OptiMOS 7 Power-Transistor |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID) at TC | 44 A | 256 A |
| Continuous Drain Current (ID) at Ta | 6.5 A | — |
| Power Dissipation (PD) at TC | 136 W | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Drain-Source On-Resistance (RDS(on)) | 27 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Paket | PG-TDSON-8 | PG-TDSON-8 (source-down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 | Trench MOSFET, silicon |
| Operating Mode | Enhancement | — |
| Status RoHS | Compliant | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| Rentang Suhu Kerja | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |
| Level MSL | — | MSL 1 (per JEDEC J-STD-020) |