ISC300N20NM6ATMA1 vs ISC011N04NM7VATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC300N20NM6ATMA1 sa pamamagitan ng Infineon at ISC011N04NM7VATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC300N20NM6ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 200V OptiMOS 7 Power-Transistor
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V 40 V
Continuous Drain Current (ID) at TC 44 A 256 A
Continuous Drain Current (ID) at Ta 6.5 A —
Power Dissipation (PD) at TC 136 W —
Power Dissipation (PD) at Ta 3 W —
Drain-Source On-Resistance (RDS(on)) 27 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) 4.5 V —
Packhaging PG-TDSON-8 PG-TDSON-8 (source-down)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 6 Trench MOSFET, silicon
Operating Mode Enhancement —
Tindminan RoHS Compliant —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 38 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
Hanay ng Temperature na Operasyon — -55 °C to +175 °C (TJ)
RoHS Compliance — Compliant (per Infineon product page)
Level ng MSL — MSL 1 (per JEDEC J-STD-020)

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