ISCH99N04NM7VATMA1 vs IQEH54NE2LM7UCGATMA1 Perbandingan
Perbandingan bersamaan detil ISCH99N04NM7VATMA1 dari Infineon dan IQEH54NE2LM7UCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISCH99N04NM7VATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current at Ta (I_D) | 40 A | — |
| Pulsed Drain Current at Tc (I_DM) | 284 A | — |
| Power Dissipation at Ta (P_D) | 3 W | — |
| Power Dissipation at Tc (P_D) | 150 W | — |
| Gate Threshold Voltage (V_th) | Up to 3.2 V | — |
| Paket | PG-TDSON-8 (TDSON-8 FL) | PG-TTFN-9-3 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Technology | OptiMOS 7 Trench Power MOSFET | — |
| Operating Mode | Enhancement-mode | — |
| Target Application | 12 V to 48 V Motor Drives | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at Ta | — | 52 A |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical in nC] |
| Rentang Suhu Kerja | — | -55C to +150C (typical MOSFET range) |
| Level MSL | — | [DATA_NEEDED: MSL rating] |