ISCH99N04NM7VATMA1 vs IQEH54NE2LM7UCGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISCH99N04NM7VATMA1 disebabkan oleh Infineon dan IQEH54NE2LM7UCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISCH99N04NM7VATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current at Ta (I_D) | 40 A | — |
| Pulsed Drain Current at Tc (I_DM) | 284 A | — |
| Power Dissipation at Ta (P_D) | 3 W | — |
| Power Dissipation at Tc (P_D) | 150 W | — |
| Gate Threshold Voltage (V_th) | Up to 3.2 V | — |
| Kemasan | PG-TDSON-8 (TDSON-8 FL) | PG-TTFN-9-3 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Technology | OptiMOS 7 Trench Power MOSFET | — |
| Operating Mode | Enhancement-mode | — |
| Target Application | 12 V to 48 V Motor Drives | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at Ta | — | 52 A |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical in nC] |
| Gambaran Suhu Operasi | — | -55C to +150C (typical MOSFET range) |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |