ISZ033N03LF2SATMA1 vs ISC052N03LF2SATMA1 Perbandingan
Perbandingan bersamaan detil ISZ033N03LF2SATMA1 dari Infineon dan ISC052N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISZ033N03LF2SATMA1 | ISC052N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Continuous Drain Current (ID) at TC=25C | 109 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TA=25C | 3 W | — |
| Power Dissipation (PD) at TC=25C | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TSDSON-8 FL (8-pin) | PG-TDSON-8-62 (TDSON EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | Trench MOSFET (OptiMOS 5) |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 30V |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 74 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.2 mΩ |
| Power Dissipation (PD) at TA=25°C | — | 3 W |
| Power Dissipation (PD) at TC=25°C | — | 52 W |
| Rentang Suhu Kerja | — | -55°C to +150°C |
| Polarity | — | N-Channel |
| Jumlah Pin | — | 8 |
| Level MSL | — | [DATA_NEEDED: MSL rating] |