ISZ033N03LF2SATMA1 vs ISC052N03LF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ033N03LF2SATMA1 disebabkan oleh Infineon dan ISC052N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISZ033N03LF2SATMA1 | ISC052N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Continuous Drain Current (ID) at TC=25C | 109 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TA=25C | 3 W | — |
| Power Dissipation (PD) at TC=25C | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TSDSON-8 FL (8-pin) | PG-TDSON-8-62 (TDSON EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | Trench MOSFET (OptiMOS 5) |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 30V |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 74 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.2 mΩ |
| Power Dissipation (PD) at TA=25°C | — | 3 W |
| Power Dissipation (PD) at TC=25°C | — | 52 W |
| Gambaran Suhu Operasi | — | -55°C to +150°C |
| Polarity | — | N-Channel |
| Kiraan Pin | — | 8 |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |