ISZ033N03LF2SATMA1 vs ISZ019N03L5SATMA1 Perbandingan

Perbandingan bersamaan detil ISZ033N03LF2SATMA1 dari Infineon dan ISZ019N03L5SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ033N03LF2SATMA1 ISZ019N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A 22 A
Continuous Drain Current (ID) at TC=25C 109 A 40 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TA=25C 3 W —
Power Dissipation (PD) at TC=25C 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 2.35 V max @ 30 uA 2 V (typical)
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] 44 nC at VGS=10V
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TSDSON-8 FL (8-pin) PG-TSDSON-8-FL (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 —
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 (<= 40V)
Polarity / Channel Type — N-Channel
RDS(on) at VGS=10V — 1.9 mΩ (typical, ID=20A)
Gate-Source Voltage Rating (VGS) — ±20 V
Input Capacitance (Ciss) — 2800 pF at VDS=15V
Rentang Suhu Kerja — -55C to +175C (TJ max)
Level MSL — 1 (per JEDEC J-STD-020)
RoHS / REACH — Compliant
Avalanche Rated — Yes
RG-tested — 100%

Spek dan Sumber

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