ISZ033N03LF2SATMA1 vs ISZ028N03LF2SATMA1 Perbandingan
Perbandingan bersamaan detil ISZ033N03LF2SATMA1 dari Infineon dan ISZ028N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISZ033N03LF2SATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Continuous Drain Current (ID) at TC=25C | 109 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | 3 W | — |
| Power Dissipation (PD) at TC=25C | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | 2.35 V |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg] |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TSDSON-8 FL (8-pin) | PG-TSDSON-8 FL (FL = flat lead) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | StrongIRFET 2 (Trench MOSFET) |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Rentang Suhu Kerja | — | -55C to +175C (junction, typical) |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Level MSL | — | 1 |
| Avalanche Energy Rated | — | Yes (single-pulse) |