ISZ033N03LF2SATMA1 vs ISZ028N03LF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ033N03LF2SATMA1 disebabkan oleh Infineon dan ISZ028N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISZ033N03LF2SATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Continuous Drain Current (ID) at TC=25C | 109 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | 3 W | — |
| Power Dissipation (PD) at TC=25C | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | 2.35 V |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg] |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TSDSON-8 FL (8-pin) | PG-TSDSON-8 FL (FL = flat lead) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | StrongIRFET 2 (Trench MOSFET) |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gambaran Suhu Operasi | — | -55C to +175C (junction, typical) |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Aras MSL | — | 1 |
| Avalanche Energy Rated | — | Yes (single-pulse) |