ISZ056N03LF2SATMA1 vs ISZ028N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISZ056N03LF2SATMA1 dari Infineon dan ISZ028N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ056N03LF2SATMA1 ISZ028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series StrongIRFET 2 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta 16 A 22 A
Continuous Drain Current (ID) at Tc 72 A 128 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) 2.35 V (typ) 2.35 V
On-Resistance (RDS(on)) max at VGS=10V 5.6 mOhm —
On-Resistance (RDS(on)) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg]
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 52 W —
Rentang Suhu Kerja -55 C to +175 C -55C to +175C (junction, typical)
Paket PG-TSDSON-8 (PQFN 3.3x3.3 mm) PG-TSDSON-8 FL (FL = flat lead)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
FET Type — N-Channel
Technology — StrongIRFET 2 (Trench MOSFET)
On-Resistance (RDS(on)) max — 2.8 mΩ
Power Dissipation (Tc) — 83 W
Power Dissipation (Ta) — 3 W
Gate Drive Voltage (recommended) — 10 V (logic level at 4.5 V)
Level MSL — 1
Avalanche Energy Rated — Yes (single-pulse)

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