K4A4G085WD-BCPB vs K4A4G085WF-BITD Perbandingan
Perbandingan bersamaan detil K4A4G085WD-BCPB dari Samsung Electronics dan K4A4G085WF-BITD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G085WD-BCPB | K4A4G085WF-BITD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organisasi | 512M x 8 | 512M x 8 |
| Die Generation | D-die | — |
| Tegangan Pemuat | 1.2 V | — |
| Antarmuka | DDR4 (Double Data Rate 4) | Parallel, DDR4 SSTL12 |
| Paket | FBGA-78 (PB) | 78-ball FBGA (78FBGA) |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount (BGA) |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | CL19 (typical at 2666 Mbps) |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Refresh | [DATA_NEEDED: refresh specification] | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| Status RoHS | Compliant (PB lead-free suffix) | — |
| Bebas Halogen | [DATA_NEEDED: halogen-free status] | — |
| Datasheet Pages | 66 pages (K4A4G085WD family datasheet) | — |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |