K4A4G085WD-BCPB vs K4A4G085WF-BITD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WD-BCPB sa pamamagitan ng Samsung Electronics at K4A4G085WF-BITD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A4G085WD-BCPB | K4A4G085WF-BITD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organisasyon | 512M x 8 | 512M x 8 |
| Die Generation | D-die | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Interface | DDR4 (Double Data Rate 4) | Parallel, DDR4 SSTL12 |
| Packhaging | FBGA-78 (PB) | 78-ball FBGA (78FBGA) |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency] | CL19 (typical at 2666 Mbps) |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Refresh | [DATA_NEEDED: refresh specification] | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| Tindminan RoHS | Compliant (PB lead-free suffix) | — |
| Wala sa Halogen | [DATA_NEEDED: halogen-free status] | — |
| Datasheet Pages | 66 pages (K4A4G085WD family datasheet) | — |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |