K4A4G165WD-BCTD vs H5AN4G6NBJR-VKC Perbandingan
Perbandingan bersamaan detil K4A4G165WD-BCTD dari Samsung Electronics dan H5AN4G6NBJR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G165WD-BCTD | H5AN4G6NBJR-VKC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 256M x 16 | — |
| Laju Data | 2666 Mbps/pin (-BCTD speed grade) | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V nominal (1.14 V to 1.26 V) |
| Core Supply (VPP) | 2.5 V | — |
| Antarmuka | SSTL-12 | Parallel |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | — |
| Paket | 96-ball FBGA | FBGA-96 / TFBGA (PBGA96) |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Suhu Kerja | 0C to +85C (commercial) | -40C to +95C |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes (external RZQ resistor) | — |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Ukuran Memori | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| Clock Frequency | — | 1.6 GHz (internal reference per distributor data) |
| Operating Current | — | 38 mA (typical, per distributor data) |
| Technology | — | CMOS |
| Body Size | — | 13 mm, 1.2 mm profile, 0.8 mm ball pitch |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration; write leveling |
| Protection Functions | — | Asynchronous reset; CRC; data mask |
| Refresh | — | Auto self-refresh |
| Packaging | — | Tray |