K4A8G085WB vs K4A8G085WC-BIWE Perbandingan
Perbandingan bersamaan detil K4A8G085WB dari Samsung Electronics dan K4A8G085WC-BIWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WB | K4A8G085WC-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Tegangan Pemuat | 1.2 V | — |
| Paket | 78-pin FBGA | 78-FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Operating Mode | DLL Enabled mode (per datasheet) | — |
| Speed Grade Suffixes | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) | — |
| Laju Data | [DATA_NEEDED: speed grade data rate in Mbps] | 3200 Mbps |
| tCL/cas latency | [DATA_NEEDED: CAS latency] | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | Auto-refresh, self-refresh |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Termination Voltage (VTT) | [DATA_NEEDED: VTT value] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Rentang Suhu Kerja | — | -40°C to +95°C |
| Antarmuka | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 (CL22) |
| Lead-Free | — | Yes |