K4A8G165WB-BCTD vs K4A8G085WB-BCRC Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCTD dari Samsung Electronics dan K4A8G085WB-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifSamsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCTD | K4A8G085WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 1G x 8 |
| Laju Data | 2666 Mbps | 2400 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| Suhu Kerja | 0C to +85C | 0°C to 85°C |
| Paket | 96FBGA | 78-ball FBGA |
| Die Generation | B-die | — |
| Tipe Mounting | Surface Mount (BGA) | — |
| Antarmuka | DDR4 (parallel, double data rate) | — |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | — |
| Dynamic On-Die Termination | Supported | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Status RoHS | Compliant (per JLCPCB listing: ROHS) | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Tegangan Pemuat | — | 1.2 V |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Access Time | — | 0.175 ns |
| Technology | — | CMOS |
| Burst Length | — | 8 and 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| RoHS | — | Compliant |