K4A8G165WC-BCPB vs K4A8G165WB-BCTD Perbandingan
Perbandingan bersamaan detil K4A8G165WC-BCPB dari Samsung Electronics dan K4A8G165WB-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WC-BCPB | K4A8G165WB-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Laju Data | DDR4-2133 (2133 Mbps/pin) | 2666 Mbps |
| Tegangan Pemuat | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Antarmuka | DDR4 (16-bit data bus) | DDR4 (parallel, double data rate) |
| Paket | 96-ball FBGA (TFBGA) | 96FBGA |
| Die Generation | C-die (1Y nm class) | B-die |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Suhu Kerja | 0C to +95C | 0C to +85C |
| Fitur | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Termination | On-die termination (ODT), dynamic | — |
| Level MSL | [DATA_NEEDED: MSL Level] | — |
| Status RoHS | Compliant | Compliant (per JLCPCB listing: ROHS) |
| Standard | JEDEC DDR4 SDRAM | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |