K4A8G165WC-BCRC vs H5AN8G6NCJR-PBC Perbandingan

Perbandingan bersamaan detil K4A8G165WC-BCRC dari Samsung Electro-Mechanics dan H5AN8G6NCJR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electro-Mechanics
K4A8G165WC-BCRC K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung

K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung

K4A8G165WC-BCRC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum K4A8G165WC-BCRC H5AN8G6NCJR-PBC
Merek Samsung Electro-Mechanics SK hynix
Kategori EEPROM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $19,69 —
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Ukuran Memori 8 Gbit 8 Gbit
Organisasi 512M x 16 —
Laju Data 2400 Mbps [DATA_NEEDED: exact speed grade of -PBC suffix]
Clock Frequency 1333 MHz —
Tegangan Pemuat 1.2 V (1.14 V to 1.26 V) —
Antarmuka Parallel, 16-bit DDR Parallel, synchronous to both clock edges
Standby Current (Idle) 2 mA —
Operating Current 64 mA —
Suhu Kerja 0 C to +95 C 0C to +95C
Paket 96-FBGA (TFBGA) FBGA-96 (96-ball fine-pitch BGA)
Tipe Mounting Surface Mount Surface Mount
Fitur Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask —
Die Generation C-die —
Memory Format DRAM —
Status RoHS Compliant Compliant
Memory Organization — 8Gb x16 (512M x 16)
Family Data Rate Range — Up to 2666 Mbps (family: H5AN8G6NCJR-xxC)
Supply Voltage (VDD) — 1.2 V
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask Function — Yes
Write Leveling — Yes
CRC Function — Yes
Dynamic On-Die Termination (ODT) — Yes
ZQ Calibration — Yes
Lead-Free / Halogen-Free — Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant)

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