K4B4G1646D-BCK00 vs K4B4G1646Q Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BCK00 dari Samsung Electronics dan K4B4G1646Q dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BCK00 | K4B4G1646Q |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | — |
| Laju Data | 1600 Mbps/pin | 1866 Mbps (PC3-14900) |
| Tegangan Pemuat | 1.35V (1.283V to 1.45V) | 1.35V |
| I/O Voltage | 1.35V | — |
| Paket | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA |
| Suhu Kerja | 0°C to 95°C (Tcase) | [DATA_NEEDED: Operating temperature range] |
| Number of Banks | 8 | — |
| Latensi CAS | 11 (at 1600 Mbps) | Programmable |
| Burst Length | 8, 4 (with burst chop) | 8 (BL8) |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | Yes |
| Lebar Bus Data | — | 16 bits |
| Die | — | Q-die |
| RoHS Compliant | — | Yes |
| On-Die Termination | — | Yes (ODT) |