K4B4G1646D-BCK00 vs K4B4G1646Q Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BCK00 disebabkan oleh Samsung Electronics dan K4B4G1646Q disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646D-BCK00 | K4B4G1646Q |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | — |
| Kadar Data | 1600 Mbps/pin | 1866 Mbps (PC3-14900) |
| Tegangan Pemberi Arus | 1.35V (1.283V to 1.45V) | 1.35V |
| I/O Voltage | 1.35V | — |
| Kemasan | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA |
| Suhu Operasi | 0°C to 95°C (Tcase) | [DATA_NEEDED: Operating temperature range] |
| Number of Banks | 8 | — |
| Latensi CAS | 11 (at 1600 Mbps) | Programmable |
| Burst Length | 8, 4 (with burst chop) | 8 (BL8) |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | Yes |
| Lebar Bus Data | — | 16 bits |
| Die | — | Q-die |
| RoHS Compliant | — | Yes |
| On-Die Termination | — | Yes (ODT) |