K4B4G1646E-BCNB vs K4B4G1646 Perbandingan
Perbandingan bersamaan detil K4B4G1646E-BCNB dari Samsung Electronics dan K4B4G1646 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4B4G1646E-BCNB | K4B4G1646 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $13,52 | — |
| Tipe Memori | DDR3 SDRAM | DDR3 SDRAM |
| Ukuran Memori | 4 Gb | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemuat | 1.35 V (1.283 V to 1.45 V) | 1.5 V (DDR3L variants 1.35 V) |
| Laju Data | 1866 Mbps | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Suhu Kerja | 0C to +95C | 0C to +95C |
| Paket | 96-ball FBGA | 96-FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Jumlah Pin | 96 | — |
| Tipe Antarmuka | Parallel | — |
| Refresh | 8K / 64 ms | — |
| Burst Length | 8, 4 (fixed) | — |
| Write Recovery Time | [DATA_NEEDED: tWR] | — |
| Row Cycle Time | [DATA_NEEDED: tRC] | — |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | — |
| Row Precharge Time | [DATA_NEEDED: tRP] | — |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | — |
| Antarmuka | — | Parallel |
| Max Data Rate | — | Up to 2133 Mbps (grade dependent) |
| Clock Frequency Range | — | 800 MHz to 2133 Mbps (grade dependent) |
| On-Chip Termination (ODT) | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Die Revisions | — | B-die, D-die, Q-die (DDR3L) |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |