K4B4G1646E-BCNB vs K4B4G1646 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BCNB disebabkan oleh Samsung Electronics dan K4B4G1646 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4B4G1646E-BCNB | K4B4G1646 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $13.52 | — |
| Jenis Ingatan | DDR3 SDRAM | DDR3 SDRAM |
| Saiz Ingatan | 4 Gb | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | 1.5 V (DDR3L variants 1.35 V) |
| Kadar Data | 1866 Mbps | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Suhu Operasi | 0C to +95C | 0C to +95C |
| Kemasan | 96-ball FBGA | 96-FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Bilangan Pin | 96 | — |
| Jenis Antaramuka | Parallel | — |
| Refresh | 8K / 64 ms | — |
| Burst Length | 8, 4 (fixed) | — |
| Write Recovery Time | [DATA_NEEDED: tWR] | — |
| Row Cycle Time | [DATA_NEEDED: tRC] | — |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | — |
| Row Precharge Time | [DATA_NEEDED: tRP] | — |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | — |
| Antaramuka | — | Parallel |
| Max Data Rate | — | Up to 2133 Mbps (grade dependent) |
| Clock Frequency Range | — | 800 MHz to 2133 Mbps (grade dependent) |
| On-Chip Termination (ODT) | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Die Revisions | — | B-die, D-die, Q-die (DDR3L) |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |