K4B4G1646E-BMK0 vs K4B4G1646D-BHMA Perbandingan
Perbandingan bersamaan detil K4B4G1646E-BMK0 dari Samsung Electronics dan K4B4G1646D-BHMA dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4B4G1646E-BMK0 | K4B4G1646D-BHMA |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| Suhu Kerja | -40°C to +95°C | -40°C to +95°C (TC) |
| Paket | 96-FBGA | 96-ball FBGA |
| Antarmuka | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Laju Data | 1600 Mbps | 1866 Mbps |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Tipe Mounting | Surface Mount | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Tegangan Pemuat | — | 1.35 V (1.283 V to 1.45 V) |
| Latensi CAS | — | 13 (at 1866 Mbps) |
| Burst Length | — | 8 and 4 |
| Number of Terminals | — | 96 |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |
| Refresh Mode | — | Auto and Self Refresh |