K4B4G1646E-BMMA vs K4B4G1646D-BCH90 Perbandingan
Perbandingan bersamaan detil K4B4G1646E-BMMA dari Samsung Electronics dan K4B4G1646D-BCH90 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCH90 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646E-BMMA | K4B4G1646D-BCH90 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $16,08 | — |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 32M x 16 |
| Laju Data | 1600 Mbps | 2133 Mb/s per pin |
| Tegangan Pemuat | 1.35 V | 1.35V (1.283V to 1.45V) |
| Suhu Kerja | -40°C to +95°C | 0°C to +85°C |
| Paket | 96-FBGA (9x13 mm) | 96-ball FBGA |
| Number of Banks | 8 | 8 |
| Antarmuka | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | 9-14 clocks (programmable) |
| Burst Length | 8, 4 (with burst chop) | 8 and 4 |
| On-Die Termination | Yes (Dynamic ODT) | Yes (ODT) |
| ZQ Calibration | Yes | Yes |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS Compliant | — | Yes |
| Bebas Halogen | — | Yes |