K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
MPN: K4B4G1646E-BMMA ✓ Aktif| Kwantitas | Harga Satuan | Lengkap |
|---|---|---|
| 1 | $27.5625 | $27,56 |
| 10 | $19.9063 | $199,06 |
| 100 | $17.6094 | $1.760,94 |
| 500 | $16.8438 | $8.421,90 |
| 1.000 | $16.0781 | $16.078,10 |
K4B4G1646E-BMMA Ringkasan
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. DDR3L is backward compatible with DDR3 slots, allowing flexible system design.
Key features of the K4B4G1646E-BMMA include a 16-bit I/O interface, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). It offers programmable CAS latency (CL) and additive latency (AL), and includes on-die termination (ODT) for improved signal integrity. The device also supports self-refresh and partial array self-refresh (PASR) for power saving in standby modes.
Technically, the K4B4G1646E-BMMA uses Samsung's E-die process technology, which provides enhanced performance and lower power consumption compared to earlier die revisions. The 96-ball FBGA package measures 9mm x 13mm with a 0.8mm ball pitch, enabling high-density board layouts. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include high-performance computing, networking equipment (routers, switches), industrial automation, automotive infotainment and ADAS, and medical imaging systems. Its wide temperature range and low voltage make it ideal for harsh environments where reliability is critical.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Alternatif penggantian untuk K4B4G1646E-BMMA — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Variasi di dalam seri ini
Model-series yang sama yang kompatibel dengan penggantian K4B4G1646E-BMMA (sama faktor bentuk dan footprint) — berbeda di dalam Package, Supply Voltage, Data Rate, Operating Temperature, Memory Type.
Alat Perbandingan Cepat — Pilih bagian alternatif untuk perbandingan paralel:
K4B4G1646E-BYMA
✗ Habis Stok
$14.3182 / Satuan
Lihat Datasheet →K4B4G1646E-BYK0
Kontak untuk harga
Lihat Datasheet →K4B4G1646D-BMK0
Kontak untuk harga
Lihat Datasheet →MT41K256M16HA-125:E
Kontak untuk harga
Lihat Datasheet →H5TC4G63AFR-PBA
✗ Habis Stok
$3.9773 / Satuan
Lihat Datasheet →IS43TR16256AL-125KBL
Kontak untuk harga
Lihat Datasheet →K4B4G1646E-BMMA Rating Maksimal & Karakteristik Listrik
| Tipe Memori | DDR3L SDRAM |
| Density | 4 Gb |
| Organisasi | 256M x 16 |
| Laju Data | 1600 Mbps |
| Tegangan Pemuat | 1.35 V |
| Suhu Kerja | -40°C to +95°C |
| Paket | 96-FBGA (9x13 mm) |
| Number of Banks | 8 |
| Antarmuka | Parallel |
| Clock Frequency | 800 MHz |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination | Yes (Dynamic ODT) |
| ZQ Calibration | Yes |
| RoHS | Compliant |
| Lead-Free | Yes |
Konfigurasi Pin K4B4G1646E-BMMA
| Pin produk A1 | VDD — Power supply (1.35V) |
| Pin produk A2 | DQ0 — Data input/output 0 |
| Pin produk A3 | DQ1 — Data input/output 1 |
| Pin produk A4 | VSS — Ground |
| Pin produk A5 | DQ2 — Data input/output 2 |
| Pin produk A6 | DQ3 — Data input/output 3 |
| Pin produk A7 | VDD — Power supply (1.35V) |
| Pin produk A8 | DQ4 — Data input/output 4 |
| Pin produk A9 | DQ5 — Data input/output 5 |
| Pin produk A10 | VSS — Ground |
| Pin produk A11 | DQ6 — Data input/output 6 |
| Pin produk A12 | DQ7 — Data input/output 7 |
| Pin produk B1 | VSS — Ground |
| Pin produk B2 | DQ8 — Data input/output 8 |
| Pin produk B3 | DQ9 — Data input/output 9 |
| Pin produk B4 | VDD — Power supply (1.35V) |
| Pin produk B5 | DQ10 — Data input/output 10 |
| Pin produk B6 | DQ11 — Data input/output 11 |
| Pin produk B7 | VSS — Ground |
| Pin produk B8 | DQ12 — Data input/output 12 |
| Pin produk B9 | DQ13 — Data input/output 13 |
| Pin produk B10 | VDD — Power supply (1.35V) |
| Pin produk B11 | DQ14 — Data input/output 14 |
| Pin produk B12 | DQ15 — Data input/output 15 |
| Pin produk C1 | VDD — Power supply (1.35V) |
| Pin produk C2 | A0 — Address input 0 |
| Pin produk C3 | A1 — Address input 1 |
| Pin produk C4 | A2 — Address input 2 |
| Pin produk C5 | A3 — Address input 3 |
| Pin produk C6 | A4 — Address input 4 |
| Pin produk C7 | A5 — Address input 5 |
| Pin produk C8 | A6 — Address input 6 |
| Pin produk C9 | A7 — Address input 7 |
| Pin produk C10 | A8 — Address input 8 |
| Pin produk C11 | A9 — Address input 9 |
| Pin produk C12 | VSS — Ground |
| Pin produk D1 | VSS — Ground |
| Pin produk D2 | A10/AP — Address input 10 / Auto precharge |
| Pin produk D3 | A11 — Address input 11 |
| Pin produk D4 | A12/BC — Address input 12 / Burst chop |
| Pin produk D5 | A13 — Address input 13 |
| Pin produk D6 | A14 — Address input 14 |
| Pin produk D7 | BA0 — Bank address 0 |
| Pin produk D8 | BA1 — Bank address 1 |
| Pin produk D9 | BA2 — Bank address 2 |
| Pin produk D10 | RAS# — Row address strobe |
| Pin produk D11 | CAS# — Column address strobe |
| Pin produk D12 | WE# — Write enable |
| Pin produk E1 | VDD — Power supply (1.35V) |
| Pin produk E2 | CS# — Chip select |
| Pin produk E3 | CKE — Clock enable |
| Pin produk E4 | ODT — On-die termination |
| Pin produk E5 | RESET# — Reset |
| Pin produk E6 | ZQ — ZQ calibration |
| Pin produk E7 | CK — Clock |
| Pin produk E8 | CK# — Complementary clock |
| Pin produk E9 | DM0 — Data mask 0 |
| Pin produk E10 | DM1 — Data mask 1 |
| Pin produk E11 | VSS — Ground |
| Pin produk E12 | VDD — Power supply (1.35V) |
| Pin produk F1 | VSS — Ground |
| Pin produk F2 | VDD — Power supply (1.35V) |
| Pin produk F3 | VSS — Ground |
| Pin produk F4 | VDD — Power supply (1.35V) |
| Pin produk F5 | VSS — Ground |
| Pin produk F6 | VDD — Power supply (1.35V) |
| Pin produk F7 | VSS — Ground |
| Pin produk F8 | VDD — Power supply (1.35V) |
| Pin produk F9 | VSS — Ground |
| Pin produk F10 | VDD — Power supply (1.35V) |
| Pin produk F11 | VSS — Ground |
| Pin produk F12 | VDD — Power supply (1.35V) |
Aplikasi Umum
K4B4G1646E-BMMA cocok untuk 6 aplikasis: Industrial Automation, Networking Equipment, Automotive Infotainment, Medical Imaging, High-Performance Computing, Consumer Electronics.
Industrial Automation
The K4B4G1646E-BMMA's wide temperature range (-40°C to +95°C) and low voltage (1.35V) make it ideal for industrial controllers and PLCs that operate in harsh environments. Its 1600 Mbps data rate ensures fast data processing for real-time control loops. The 4Gb density provides ample memory for complex automation algorithms and data logging. With features like auto precharge and ZQ calibration, it maintains signal integrity in noisy industrial settings, reducing system errors and improving reliability.
Direkomendasikan
Networking Equipment
In routers and switches, the K4B4G1646E-BMMA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1600 Mbps data rate and 16-bit interface enable fast data throughput, while the 1.35V operation reduces power consumption in always-on network devices. The 96-FBGA package allows compact board designs, and features like dynamic ODT improve signal integrity at high speeds, ensuring reliable data transmission in demanding network environments.
Direkomendasikan
Automotive Infotainment
The K4B4G1646E-BMMA is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity. Its -40°C to +95°C temperature range meets automotive requirements, and the 1.35V low voltage helps reduce power consumption in vehicles. The 4Gb density supports large maps and media files, while the 1600 Mbps data rate ensures smooth performance. Features like auto precharge and ZQ calibration enhance reliability in the automotive environment.
Direkomendasikan
Medical Imaging
In medical imaging devices such as ultrasound and MRI systems, the K4B4G1646E-BMMA provides high-speed memory for image processing and storage. Its 1600 Mbps data rate enables fast data transfer, while the 4Gb density can hold large image frames. The wide temperature range ensures reliable operation in clinical environments. The low voltage operation reduces heat generation, which is critical in sensitive medical equipment. Features like dynamic ODT help maintain signal integrity in high-speed imaging data paths.
Direkomendasikan
High-Performance Computing
The K4B4G1646E-BMMA is used in servers and workstations for high-speed data processing. Its 1600 Mbps data rate and 16-bit interface provide high bandwidth for compute-intensive tasks. The 1.35V operation reduces power consumption in data centers, contributing to energy efficiency. The 96-FBGA package allows high-density memory modules, and features like auto precharge and ZQ calibration ensure reliable operation at high speeds. This memory is ideal for applications requiring large memory capacity and fast access times.
Direkomendasikan
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the K4B4G1646E-BMMA provides high-speed memory for multimedia processing and app execution. Its 1600 Mbps data rate ensures smooth video playback and responsive user interfaces. The 1.35V low voltage helps extend battery life in portable devices. The 4Gb density supports multiple applications and media content. Features like dynamic ODT improve signal integrity in compact designs, making it suitable for space-constrained consumer electronics.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk K4B4G1646E-BMMA — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | E: 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung | Samsung | Samsung | Samsung | E: Micron | SK Hynix | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | E: 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | E: 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | E: 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | E: 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | E: 0°C to +95°C | -40°C to +95°C | -40°C to +95°C |
Diferensiator Kunci
- Wide temperature range (-40°C to +95°C) (vsMT41K256M16HA-125:E)
- E-die process technology (vsK4B4G1646D-BMK0)
- High-speed 1600 Mbps operation (vsIS43TR16256AL-125KBL)
Catatan Desain
For high-speed DDR3L designs, maintain controlled impedance of 40-60 ohms for data and address lines. Use a 4-layer or more PCB with solid ground plane. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Samsung datasheet to minimize signal integrity issues.
The K4B4G1646E-BMMA operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Calculate junction temperature to ensure it stays within the maximum rating. For industrial applications, consider derating if ambient temperature exceeds 85°C.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Verify that the CKE pin is properly controlled during power-up and power-down sequences to avoid data corruption. Also, ensure the supply voltage is within 1.283V to 1.45V as per DDR3L specifications.
Informasi Konformitas
RoHS compliant per LCSC listing. Lead-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
