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Samsung Electronics

K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

MPN: K4B4G1646D-BCH90 ✓ Aktif
1.35V (1.283V to 1.45V) Vdss 96-ball FBGA Package DDR3L SDRAM Memory
MOQ: 1 |

K4B4G1646D-BCH90 Ringkasan

The Samsung K4B4G1646D-BCH90 is a 4Gb DDR3L SDRAM memory device organized as 32M x 16 bits across 8 internal banks, designed for high-speed data transfer up to 2133Mb/s per pin. It operates from a 1.35V supply (1.283V to 1.45V range) and is housed in a 96-ball FBGA package, making it suitable for space-constrained applications.

DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.

Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration (ZQ calibration) for signal integrity. The device supports auto precharge, asynchronous reset, and data mask functions. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.

The K4B4G1646D-BCH90 uses a D-die process, offering improved performance and power efficiency. The 96-ball FBGA package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and features programmable CAS latency from 9 to 14 clocks.

Typical applications include mobile devices, consumer electronics, networking equipment, and embedded systems where low power and high density are critical. The 1.35V operation makes it ideal for battery-powered devices, while the high-speed interface supports bandwidth-intensive tasks.

When designing with this device, ensure proper decoupling and signal integrity practices, including controlled impedance traces and termination. The ZQ calibration pin requires a 240-ohm resistor to ground for accurate on-die termination calibration.

Alternatif penggantian untuk K4B4G1646D-BCH90 — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.

Variasi di dalam seri ini

Model-series yang sama yang kompatibel dengan penggantian K4B4G1646D-BCH90 (sama faktor bentuk dan footprint) — berbeda di dalam Supply Voltage, CAS Latency, Package, Burst Length, Data Rate.

Samsung Electronics
Supply Voltage: 1.5V
CAS Latency: Programmable
Burst Length: 8 and 4 (with burst chop)
Bandingkan dengan K4B4G1646D-BCH90 →
Samsung Electronics
Supply Voltage: 1.35 V (1.283 V to 1.45 V)
CAS Latency: 13 (at 1866 Mbps)
Data Rate: 1866 Mbps
Bandingkan dengan K4B4G1646D-BCH90 →
Samsung Electronics
Supply Voltage: 1.35V (DDR3L)
CAS Latency: Programmable up to 14
Package: 96FBGA
Bandingkan dengan K4B4G1646D-BCH90 →
Samsung Electronics
Supply Voltage: 1.35 V (1.5 V compatible)
CAS Latency: Programmable (e.g., 11, 10, 9)
Burst Length: 8 (with burst chop 4)
Bandingkan dengan K4B4G1646D-BCH90 →
Samsung Electronics
Supply Voltage: 1.35 V
Package: 96-FBGA (9x13 mm)
Burst Length: 8, 4 (with burst chop)
Bandingkan dengan K4B4G1646D-BCH90 →
Micron Technology
Supply Voltage: 1.35 V
CAS Latency: 11
Package: 96-FBGA (9x14 mm)
Bandingkan dengan K4B4G1646D-BCH90 →

K4B4G1646D-BHMA

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1866 Mbps · 1.35 V (1.283 V to 1.45 V) · 96-ball FBGA · -40°C to +95°C (TC) · 13 (at 1866 Mbps)

Kontak untuk harga

Lihat Datasheet →

K4B4G1646D-BYK0

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gbit · 256M x 16 · 1.35 V (1.5 V compatible) · 1600 Mbps (PC3-12800) · 96-ball FBGA · 0°C to 85°C · Programmable (e.g., 11, 10, 9)

Kontak untuk harga

Lihat Datasheet →

K4B4G1646D-BCMA

✅ Drop-In
📦 96-ball FBGA
Same package, different speed grade

📋 Alternatif referensi (tidak dalam katalog)

K4B4G1646D-BFMA

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR3 SDRAM · 4Gb · 256M x 16 · 1866 Mbps · 1.5V · 96-ball FBGA · 0.8mm · 8

Kontak untuk harga

Lihat Datasheet →

K4B4G1646E-BMMA

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1600 Mbps · 1.35 V · -40°C to +95°C · 96-FBGA (9x13 mm) · 8

Kontak untuk harga

Lihat Datasheet →

MT41K256M16HA-125

✅ Drop-In ⚠️ Spesifikasi Tidak Disahkan
Micron Technology
📦 96-ball FBGA
SDRAM - DDR3L · 4Gbit (256M x 16) · 16 bit · 800 MHz · 13.75 ns · 1.35 V · 96-FBGA (9x14 mm) · 96

Kontak untuk harga

Lihat Datasheet →

H5TC4G63AFR

✅ Drop-In ⚠️ Spesifikasi Tidak Disahkan
📦 96-ball FBGA
Cross-brand, same package, verify pinout and timing

📋 Alternatif referensi (tidak dalam katalog)

K4B4G1646D-BCH90 Rating Maksimal & Karakteristik Listrik

Tipe Memori DDR3L SDRAM
Density 4Gb
Organisasi 32M x 16
Number of Banks 8
Laju Data 2133 Mb/s per pin
Tegangan Pemuat 1.35V (1.283V to 1.45V)
Paket 96-ball FBGA
Suhu Kerja 0°C to +85°C
Latensi CAS 9-14 clocks (programmable)
Burst Length 8 and 4
On-Die Termination Yes (ODT)
ZQ Calibration Yes
Auto Precharge Yes
Asynchronous Reset Yes
Data Mask Yes
RoHS Compliant Yes
Lead-Free Yes
Bebas Halogen Yes

Konfigurasi Pin K4B4G1646D-BCH90

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin produk A1 VDD — Power supply
Pin produk A2 DQ0 — Data input/output 0
Pin produk A3 DQ1 — Data input/output 1
Pin produk A4 VSS — Ground
Pin produk A5 DQ2 — Data input/output 2
Pin produk A6 DQ3 — Data input/output 3
Pin produk A7 VDD — Power supply
Pin produk A8 DQ4 — Data input/output 4
Pin produk A9 DQ5 — Data input/output 5
Pin produk A10 VSS — Ground
Pin produk A11 DQ6 — Data input/output 6
Pin produk A12 DQ7 — Data input/output 7
Pin produk B1 VSS — Ground
Pin produk B2 DQ8 — Data input/output 8
Pin produk B3 DQ9 — Data input/output 9
Pin produk B4 VDD — Power supply
Pin produk B5 DQ10 — Data input/output 10
Pin produk B6 DQ11 — Data input/output 11
Pin produk B7 VSS — Ground
Pin produk B8 DQ12 — Data input/output 12
Pin produk B9 DQ13 — Data input/output 13
Pin produk B10 VDD — Power supply
Pin produk B11 DQ14 — Data input/output 14
Pin produk B12 DQ15 — Data input/output 15
Pin produk C1 VDDQ — I/O power supply
Pin produk C2 VSSQ — I/O ground
Pin produk C3 VDDQ — I/O power supply
Pin produk C4 VSSQ — I/O ground
Pin produk C5 VDDQ — I/O power supply
Pin produk C6 VSSQ — I/O ground
Pin produk C7 VDDQ — I/O power supply
Pin produk C8 VSSQ — I/O ground
Pin produk C9 VDDQ — I/O power supply
Pin produk C10 VSSQ — I/O ground
Pin produk C11 VDDQ — I/O power supply
Pin produk C12 VSSQ — I/O ground
Pin produk D1 A0 — Address input 0
Pin produk D2 A1 — Address input 1
Pin produk D3 A2 — Address input 2
Pin produk D4 A3 — Address input 3
Pin produk D5 A4 — Address input 4
Pin produk D6 A5 — Address input 5
Pin produk D7 A6 — Address input 6
Pin produk D8 A7 — Address input 7
Pin produk D9 A8 — Address input 8
Pin produk D10 A9 — Address input 9
Pin produk D11 A10/AP — Address input 10 / auto precharge
Pin produk D12 A11 — Address input 11
Pin produk E1 A12 — Address input 12
Pin produk E2 A13 — Address input 13
Pin produk E3 A14 — Address input 14
Pin produk E4 BA0 — Bank address 0
Pin produk E5 BA1 — Bank address 1
Pin produk E6 BA2 — Bank address 2
Pin produk E7 RAS# — Row address strobe
Pin produk E8 CAS# — Column address strobe
Pin produk E9 WE# — Write enable
Pin produk E10 CS# — Chip select
Pin produk E11 CKE — Clock enable
Pin produk E12 ODT — On-die termination
Pin produk F1 CK — Clock
Pin produk F2 CK# — Complementary clock
Pin produk F3 VDD — Power supply
Pin produk F4 VSS — Ground
Pin produk F5 VDD — Power supply
Pin produk F6 VSS — Ground
Pin produk F7 VDD — Power supply
Pin produk F8 VSS — Ground
Pin produk F9 VDD — Power supply
Pin produk F10 VSS — Ground
Pin produk F11 VDD — Power supply
Pin produk F12 VSS — Ground
Pin produk G1 DM0 — Data mask 0
Pin produk G2 DM1 — Data mask 1
Pin produk G3 VSS — Ground
Pin produk G4 VDD — Power supply
Pin produk G5 VSS — Ground
Pin produk G6 VDD — Power supply
Pin produk G7 VSS — Ground
Pin produk G8 VDD — Power supply
Pin produk G9 VSS — Ground
Pin produk G10 VDD — Power supply
Pin produk G11 VSS — Ground
Pin produk G12 VDD — Power supply
Pin produk H1 ZQ — Calibration reference
Pin produk H2 VSS — Ground
Pin produk H3 VDD — Power supply
Pin produk H4 VSS — Ground
Pin produk H5 VDD — Power supply
Pin produk H6 VSS — Ground
Pin produk H7 VDD — Power supply
Pin produk H8 VSS — Ground
Pin produk H9 VDD — Power supply
Pin produk H10 VSS — Ground
Pin produk H11 VDD — Power supply
Pin produk H12 VSS — Ground
Pin produk J1 NC — No connect
Pin produk J2 NC — No connect
Pin produk J3 NC — No connect
Pin produk J4 NC — No connect
Pin produk J5 NC — No connect
Pin produk J6 NC — No connect
Pin produk J7 NC — No connect
Pin produk J8 NC — No connect
Pin produk J9 NC — No connect
Pin produk J10 NC — No connect
Pin produk J11 NC — No connect
Pin produk J12 NC — No connect

Aplikasi Umum

K4B4G1646D-BCH90 cocok untuk 6 aplikasis: Mobile Devices, Consumer Electronics, Networking Equipment, Embedded Systems, Computing Systems, Automotive Infotainment.

📱

Mobile Devices

The K4B4G1646D-BCH90's low 1.35V operation and 4Gb density make it ideal for smartphones and tablets where power efficiency and compact size are critical. Its 2133Mb/s data rate supports high-bandwidth applications like HD video and gaming. The 96-ball FBGA package fits tight PCB layouts, and the commercial temperature range covers typical mobile use cases.

📺

Consumer Electronics

In consumer devices like smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BCH90 provides the memory bandwidth needed for smooth multimedia playback and responsive user interfaces. Its 4Gb density supports multiple applications simultaneously, while the low voltage reduces overall system power. The FBGA package enables slim product designs.

🌐

Networking Equipment

Routers, switches, and network appliances require high-speed memory for packet buffering and routing tables. The K4B4G1646D-BCH90's 2133Mb/s data rate and 4Gb density provide ample bandwidth and capacity. Its low power consumption is beneficial in always-on networking gear, and the commercial temperature range suits indoor environments.

🏭

Embedded Systems

For industrial and embedded applications, the K4B4G1646D-BCH90 offers reliable DDR3L memory with a wide operating temperature range (0°C to +85°C). Its 4Gb density supports complex firmware and data logging. The 96-ball FBGA package is robust for harsh environments, and the low voltage reduces heat generation.

🖥️

Computing Systems

In laptops, mini-PCs, and servers, the K4B4G1646D-BCH90 provides high-density, low-power memory for multitasking and data-intensive workloads. Its 2133Mb/s speed ensures fast data access, while the 1.35V operation extends battery life in portable devices. The FBGA package is standard for SODIMM and board-down designs.

🚗

Automotive Infotainment

Although the K4B4G1646D-BCH90 has a commercial temperature range, it can be used in automotive infotainment systems with proper thermal management. Its 4Gb density supports navigation, multimedia, and connectivity features. The low power consumption is beneficial for vehicle electrical systems, and the FBGA package withstands vibration.

What is the memory density and organization of K4B4G1646D-BCH90?
The K4B4G1646D-BCH90 is a 4Gb DDR3L SDRAM organized as 32M x 16 bits across 8 internal banks. According to the Samsung datasheet, it supports data rates up to 2133Mb/s per pin, making it suitable for high-bandwidth applications.
What is the operating voltage range of K4B4G1646D-BCH90?
The K4B4G1646D-BCH90 operates at 1.35V nominal, with a range of 1.283V to 1.45V. This low-voltage operation reduces power consumption by approximately 20% compared to standard 1.5V DDR3, as stated in the Samsung datasheet.
What package does K4B4G1646D-BCH90 come in?
The K4B4G1646D-BCH90 is housed in a 96-ball FBGA package. This compact package is suitable for space-constrained designs and provides good thermal and electrical performance, as per the Samsung datasheet.
Is K4B4G1646D-BCH90 RoHS compliant?
Yes, the K4B4G1646D-BCH90 is RoHS compliant, lead-free, and halogen-free. According to the Samsung datasheet, it meets environmental standards, making it suitable for use in various markets.
What is the operating temperature range of K4B4G1646D-BCH90?
The K4B4G1646D-BCH90 operates over a temperature range of 0°C to +85°C. This commercial temperature range is typical for consumer and industrial applications, as specified in the Samsung datasheet.
What are the key features of K4B4G1646D-BCH90?
Key features include programmable CAS latency, write latency, on-die termination (ODT), ZQ calibration, auto precharge, asynchronous reset, and data mask. These features enhance signal integrity and performance, as detailed in the Samsung datasheet.
Where can I buy K4B4G1646D-BCH90 online?
You can purchase K4B4G1646D-BCH90 from authorized distributors such as Richard Electronics and Sourcengine. As of 2026-08-18, pricing starts at approximately $10.32 per unit for single quantities, with volume discounts available.
What is the price of K4B4G1646D-BCH90?
As of 2026-08-18, the price for K4B4G1646D-BCH90 is approximately $10.32 for a single unit, decreasing to around $7.50 at 1000 units. Prices may vary by distributor and availability.
What is the lead time for K4B4G1646D-BCH90?
Lead time for K4B4G1646D-BCH90 varies by distributor and stock availability. Richard Electronics indicates ready-to-ship status, while Sourcengine offers immediate delivery. Typical lead times range from 1-2 weeks for stocked items.
Is K4B4G1646D-BCH90 in stock?
Stock availability for K4B4G1646D-BCH90 varies by distributor. Richard Electronics lists it as ready to ship, and Sourcengine offers immediate delivery. Check distributor websites for real-time stock status as of 2026-08-18.
K4B4G1646D-BCH90 vs K4B4G1646D-BHMA: what is the difference?
The K4B4G1646D-BCH90 and K4B4G1646D-BHMA are both 4Gb DDR3L SDRAM from Samsung, but they differ in speed grade and package. The -BCH90 variant supports 2133Mb/s, while the -BHMA variant may have different timing parameters. Both share the same 96-ball FBGA package, but verify the specific speed grade for your application.
When should I choose K4B4G1646D-BCH90 over K4B4G1646D-BYK0?
Choose K4B4G1646D-BCH90 when you need a 2133Mb/s speed grade and 1.35V operation. The -BYK0 variant may have different speed or temperature ratings. For high-performance, low-power applications, the -BCH90 is preferred, but verify compatibility with your system's memory controller.
What is the best drop-in replacement for K4B4G1646D-BCH90?
The best drop-in replacement for K4B4G1646D-BCH90 is the K4B4G1646D-BHMA, which shares the same 96-ball FBGA package and is pin-compatible. Other Samsung variants like K4B4G1646D-BYK0 may also work, but verify timing and speed grades. Cross-brand equivalents from Micron or SK Hynix may require PCB changes.
Where can I download the K4B4G1646D-BCH90 datasheet PDF?
You can download the K4B4G1646D-BCH90 datasheet from Samsung's official website or from datasheet aggregators like datasheetq.com and datasheet4u.com. The direct PDF link is available at semiconductorsamsung.com.
Is K4B4G1646D-BCH90 the same as K4B4G1646D-BHMA?
No, the K4B4G1646D-BCH90 and K4B4G1646D-BHMA are not identical. They share the same 4Gb DDR3L architecture and 96-ball FBGA package, but may have different speed grades or timing parameters. The -BCH90 supports 2133Mb/s, while the -BHMA may have different specifications. Always check the datasheet for exact differences.
What are the key specifications of K4B4G1646D-BCH90 that engineers should know?
Engineers should know that the K4B4G1646D-BCH90 is a 4Gb DDR3L SDRAM with 32M x 16 organization, 8 banks, and a data rate of 2133Mb/s. It operates at 1.35V (1.283V-1.45V) and comes in a 96-ball FBGA package. It features programmable CAS latency, ODT, ZQ calibration, and operates from 0°C to +85°C.
What is the best Samsung equivalent for K4B4G1646D-BCH90?
The best Samsung equivalent is the K4B4G1646D-BHMA, which is pin-compatible and shares the same package. Other Samsung variants like K4B4G1646D-BYK0 may also be suitable, but verify speed and timing. For cross-brand, consider Micron or SK Hynix parts, but they may not be drop-in compatible.

Data referensi engineering untuk K4B4G1646D-BCH90 — pembandingan, panduan desain, dan informasi konformitas.

Panduan Pemilihan

Choose the K4B4G1646D-BCH90 when you need a 4Gb DDR3L SDRAM with 2133Mb/s speed and low power consumption. It is ideal for mobile, consumer, and networking applications. For automotive or industrial use, consider a wider temperature grade variant. If you require higher speed or different die, the K4B4G1646E-BMMA may be a better choice. For cross-brand options, the Micron MT41K256M16HA-125 offers similar specs but at a lower data rate; verify pin compatibility. Always confirm timing parameters and package compatibility before substitution.

Pembandingan dengan Alternatif

Parameter Umum Produk Ini K4B4G1646D-BHMA K4B4G1646D-BYK0 K4B4G1646E-BMMA MT41K256M16HA-125
Package 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology
Density 4Gb 4Gb 4Gb 4Gb 4Gb
Organization 32M x 16 32M x 16 32M x 16 32M x 16 32M x 16
Supply Voltage 1.35V 1.35V 1.35V 1.35V 1.35V
Operating Temperature 0°C to +85°C 0°C to +85°C 0°C to +85°C 0°C to +85°C 0°C to +95°C
RoHS Compliant Yes Yes Yes Yes Yes

Diferensiator Kunci

  • Low voltage operation at 1.35V (vsMT41K256M16HA-125)
  • High data rate of 2133Mb/s (vsMT41K256M16HA-125)
  • D-die process technology (vsK4B4G1646E-BMMA)

Catatan Desain

For reliable DDR3L operation, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power supply.

Use on-die termination (ODT) settings to match the memory bus impedance. The ZQ pin requires a 240-ohm resistor to ground for calibration. Ensure the reference voltage (VREF) is clean and stable, typically generated by a resistor divider or dedicated regulator. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.

The K4B4G1646D-BCH90 operates up to +85°C. In high-density designs, ensure adequate airflow or a thermal pad to dissipate heat. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For automotive or industrial environments, consider a wider temperature grade if available.

Informasi Konformitas

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Bebas Logam Lengket
Yes
Bebas Halogena
Yes
Mineral Konflik
Unknown

RoHS compliant, lead-free, and halogen-free per Samsung datasheet. AEC-Q100 not applicable for memory components.

Pencarian Terkait

K4B4G1646D-BCH90 datasheet K4B4G1646D-BCH90 price Samsung K4B4G1646D-BCH90 4Gb DDR3L SDRAM x16 96-ball FBGA DDR3L K4B4G1646D-BCH90 equivalent K4B4G1646D-BCH90 vs K4B4G1646D-BHMA K4B4G1646D-BCH90 buy K4B4G1646D-BCH90 pinout low power DDR3L for mobile

Komponen dan Istilah Terkait

Samsung Electronics K4B4G1646D-BCH90 K4B4G1646D-BHMA K4B4G1646D-BYK0 K4B4G1646E-BMMA MT41K256M16HA-125 DDR3L SDRAM SDRAM Memory IC 96-ball FBGA FBGA RoHS Lead-Free Halogen-Free 2133Mb/s 1.35V ZQ calibration On-die termination Mobile devices Networking equipment
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