K4RAH086VB-BIWM vs H5CG48MEBDX014N Perbandingan
Perbandingan bersamaan detil K4RAH086VB-BIWM dari Samsung Electronics dan H5CG48MEBDX014N dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4RAH086VB-BIWM | H5CG48MEBDX014N |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Laju Data | 5600 Mbps per pin | 4800 Mbps |
| Organisasi | [DATA_NEEDED: organization x4/x8] | 2G x 8 |
| Tegangan Pemuat | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| Suhu Kerja | [DATA_NEEDED: temperature range] | 0C to +95C |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Row Address | — | 12 bits |
| Column Address | — | 9 bits |
| Die Generation | — | M-die |
| Paket | — | FBGA-82 (11 x 10 mm) |
| Tipe Antarmuka | — | Parallel, DDR5 |
| Memory Class | — | Synchronous DRAM |
| Speed Class | — | DDR5-4800 (PC5) |