K4RAH086VB-BIWM vs H5CG48MEBDX014N 比較
詳細並排比較 K4RAH086VB-BIWM 由 Samsung Electronics 與 H5CG48MEBDX014N 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RAH086VB-BIWM | H5CG48MEBDX014N |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 資料速率 | 5600 Mbps per pin | 4800 Mbps |
| 組織 | [DATA_NEEDED: organization x4/x8] | 2G x 8 |
| 供應電壓 | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| 工作溫度 | [DATA_NEEDED: temperature range] | 0C to +95C |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Row Address | — | 12 bits |
| Column Address | — | 9 bits |
| Die Generation | — | M-die |
| 封裝 | — | FBGA-82 (11 x 10 mm) |
| 介面類型 | — | Parallel, DDR5 |
| Memory Class | — | Synchronous DRAM |
| Speed Class | — | DDR5-4800 (PC5) |