K4RAH086VB-BIWM vs H5CG48MEBDX014N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RAH086VB-BIWM disebabkan oleh Samsung Electronics dan H5CG48MEBDX014N disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4RAH086VB-BIWM | H5CG48MEBDX014N |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Kadar Data | 5600 Mbps per pin | 4800 Mbps |
| Organisasi | [DATA_NEEDED: organization x4/x8] | 2G x 8 |
| Tegangan Pemberi Arus | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| Suhu Operasi | [DATA_NEEDED: temperature range] | 0C to +95C |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Row Address | — | 12 bits |
| Column Address | — | 9 bits |
| Die Generation | — | M-die |
| Kemasan | — | FBGA-82 (11 x 10 mm) |
| Jenis Antaramuka | — | Parallel, DDR5 |
| Memory Class | — | Synchronous DRAM |
| Speed Class | — | DDR5-4800 (PC5) |