K4RBH165VB-BCQK vs K4RHE165VB-BCWM Perbandingan

Perbandingan bersamaan detil K4RBH165VB-BCQK dari Samsung Electronics dan K4RHE165VB-BCWM dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
K4RBH165VB-BCQK K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK ✓ Aktif
Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE165VB-BCWM ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum K4RBH165VB-BCQK K4RHE165VB-BCWM
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR5 SDRAM DDR5 SDRAM
Ukuran Memori 16 Gb —
Organisasi 1G x 16 1G x 16
Laju Data 4800 Mbps/pin 5600 Mbps
Speed Grade BCQK (4800 Mbps) —
Suhu Kerja 0 C to +85 C 0 C to +85 C
Self Refresh Auto self-refresh —
Reset Function Asynchronous reset —
Error Correction On-chip (on-die) ECC —
Write Leveling Yes —
CRC Function Yes —
ZQ Calibration Yes —
Tegangan Pemuat [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] 1.1 V
Package Type [DATA_NEEDED: exact package code, expected FBGA surface mount] —
Tipe Mounting Surface Mount Surface Mount
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Burst Length [DATA_NEEDED: burst length (BL16 per DDR5 standard)] —
Density — 24 Gb
Paket — 106 FBGA
Product Status — Mass Production
Antarmuka — Parallel, DDR5
Generation — DDR5
Application Segment — DDR5 memory modules and HPC systems
Speed Grade Suffix — BCWM
tCK (Clock Period) — [DATA_NEEDED: clock period]
Latensi CAS — [DATA_NEEDED: CAS latency]

Spek dan Sumber

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