K4RHE165VB-BCWM vs K4RAH165VB-BCQK Perbandingan
Perbandingan bersamaan detil K4RHE165VB-BCWM dari Samsung Electronics dan K4RAH165VB-BCQK dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
K4RAH165VB-BCQK ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4RHE165VB-BCWM | K4RAH165VB-BCQK |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | — |
| Organisasi | 1G x 16 | — |
| Laju Data | 5600 Mbps | 4800 Mbps |
| Tegangan Pemuat | 1.1 V | — |
| Paket | 106 FBGA | 106-ball FBGA |
| Suhu Kerja | 0 C to +85 C | 0C to +85C |
| Product Status | Mass Production | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel, DDR5 | — |
| Generation | DDR5 | — |
| Application Segment | DDR5 memory modules and HPC systems | — |
| Speed Grade Suffix | BCWM | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| tCK (Clock Period) | [DATA_NEEDED: clock period] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Ukuran Memori | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.1 V |
| Error Correction | — | On-die ECC |
| Fitur | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Memory Format | — | DRAM (volatile) |
| Packaging | — | Tray |
| Status Lingkungan Hidup | — | Active |
| Unit Price | — | [DATA_NEEDED: unit price] |