K4RHE165VB-BCWM vs K4RAH165VB-BCQK 比較
詳細並排比較 K4RHE165VB-BCWM 由 Samsung Electronics 與 K4RAH165VB-BCQK 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RHE165VB-BCWM | K4RAH165VB-BCQK |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | — |
| 組織 | 1G x 16 | — |
| 資料速率 | 5600 Mbps | 4800 Mbps |
| 供應電壓 | 1.1 V | — |
| 封裝 | 106 FBGA | 106-ball FBGA |
| 工作溫度 | 0 C to +85 C | 0C to +85C |
| Product Status | Mass Production | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | Parallel, DDR5 | — |
| Generation | DDR5 | — |
| Application Segment | DDR5 memory modules and HPC systems | — |
| Speed Grade Suffix | BCWM | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| tCK (Clock Period) | [DATA_NEEDED: clock period] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| 記憶體容量 | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.1 V |
| Error Correction | — | On-die ECC |
| 功能特色 | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Memory Format | — | DRAM (volatile) |
| Packaging | — | Tray |
| 生命週期狀態 | — | Active |
| Unit Price | — | [DATA_NEEDED: unit price] |