K6X0808C1D-BF70T vs K6X0808C1D-GF55T Perbandingan
Perbandingan bersamaan detil K6X0808C1D-BF70T dari Samsung Electronics dan K6X0808C1D-GF55T dari Samsung Electro-Mechanics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K6X0808C1D-BF70T | K6X0808C1D-GF55T |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electro-Mechanics |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | SRAM - Asynchronous | SRAM - Asynchronous |
| Ukuran Memori | 256 Kbit | 256 Kbit |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 55 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| Suhu Kerja | -40C to +85C (TA) | [DATA_NEEDED: operating temperature range] |
| Paket | 28-SOP | 28-SOP (450 mil) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Process Technology | CMOS | Full CMOS |
| Address Bus Width | 15 bit (A0-A14) | 15 bit |
| Lebar Bus Data | 8 bit (I/O0-I/O7) | 8 bit |
| Control Signals | CE, OE, WE | CE, OE, WE |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Organisasi | — | 32K x 8 |
| Tegangan Pemuat | — | 5.0 V |
| Antarmuka | — | Parallel |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Active Current | — | [DATA_NEEDED: active current] |
| Data Retention Voltage | — | Low data retention voltage supported (per datasheet) |
| Packaging | — | Tape & Reel (T suffix) |