K6X0808C1D-BF70T vs K6X0808C1D-GF55T 比較
詳細並排比較 K6X0808C1D-BF70T 由 Samsung Electronics 與 K6X0808C1D-GF55T 由 Samsung Electro-Mechanics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ 啟用中規格比較
| 參數 | K6X0808C1D-BF70T | K6X0808C1D-GF55T |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electro-Mechanics |
| 類別 | DRAM | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 記憶體容量 | 256 Kbit | 256 Kbit |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 55 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| 工作溫度 | -40C to +85C (TA) | [DATA_NEEDED: operating temperature range] |
| 封裝 | 28-SOP | 28-SOP (450 mil) |
| 安裝類型 | Surface Mount | Surface Mount |
| Process Technology | CMOS | Full CMOS |
| Address Bus Width | 15 bit (A0-A14) | 15 bit |
| 資料匯流排寬度 | 8 bit (I/O0-I/O7) | 8 bit |
| Control Signals | CE, OE, WE | CE, OE, WE |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| 組織 | — | 32K x 8 |
| 供應電壓 | — | 5.0 V |
| 介面 | — | Parallel |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Active Current | — | [DATA_NEEDED: active current] |
| Data Retention Voltage | — | Low data retention voltage supported (per datasheet) |
| Packaging | — | Tape & Reel (T suffix) |