K6X0808C1D-BF70T vs K6X0808C1D-GF55T Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF70T disebabkan oleh Samsung Electronics dan K6X0808C1D-GF55T disebabkan oleh Samsung Electro-Mechanics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K6X0808C1D-BF70T K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T ✓ Aktif
Samsung Electro-Mechanics
K6X0808C1D-GF55T K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung

K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung

K6X0808C1D-GF55T ✓ Aktif

Pengandingan Spesifikasi

Parametr K6X0808C1D-BF70T K6X0808C1D-GF55T
Merek Samsung Electronics Samsung Electro-Mechanics
Kategori DRAM DRAM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan SRAM - Asynchronous SRAM - Asynchronous
Saiz Ingatan 256 Kbit 256 Kbit
Memory Organization 32K x 8 —
Memory Interface Parallel —
Access Time 70 ns 55 ns
Write Cycle Time - Word, Page 70 ns —
Voltage - Supply 4.5 V to 5.5 V —
Suhu Operasi -40C to +85C (TA) [DATA_NEEDED: operating temperature range]
Kemasan 28-SOP 28-SOP (450 mil)
Jenis Pemasangan Surface Mount Surface Mount
Process Technology CMOS Full CMOS
Address Bus Width 15 bit (A0-A14) 15 bit
Lebar Bus Data 8 bit (I/O0-I/O7) 8 bit
Control Signals CE, OE, WE CE, OE, WE
I/O Compatibility TTL compatible —
Refresh Requirement None (fully static operation) —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Organisasi — 32K x 8
Tegangan Pemberi Arus — 5.0 V
Antaramuka — Parallel
Standby Current — [DATA_NEEDED: standby current]
Active Current — [DATA_NEEDED: active current]
Data Retention Voltage — Low data retention voltage supported (per datasheet)
Packaging — Tape & Reel (T suffix)

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