K6X0808C1D-GF55T vs K6X0808C1D-BF70T Perbandingan
Perbandingan bersamaan detil K6X0808C1D-GF55T dari Samsung Electro-Mechanics dan K6X0808C1D-BF70T dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K6X0808C1D-GF55T | K6X0808C1D-BF70T |
|---|---|---|
| Merek | Samsung Electro-Mechanics | Samsung Electronics |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | SRAM - Asynchronous | SRAM - Asynchronous |
| Ukuran Memori | 256 Kbit | 256 Kbit |
| Organisasi | 32K x 8 | — |
| Access Time | 55 ns | 70 ns |
| Tegangan Pemuat | 5.0 V | — |
| Antarmuka | Parallel | — |
| Process Technology | Full CMOS | CMOS |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket | 28-SOP (450 mil) | 28-SOP |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +85C (TA) |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Active Current | [DATA_NEEDED: active current] | — |
| Data Retention Voltage | Low data retention voltage supported (per datasheet) | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Address Bus Width | 15 bit | 15 bit (A0-A14) |
| Lebar Bus Data | 8 bit | 8 bit (I/O0-I/O7) |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging | Tape & Reel (T suffix) | — |
| Memory Organization | — | 32K x 8 |
| Memory Interface | — | Parallel |
| Write Cycle Time - Word, Page | — | 70 ns |
| Voltage - Supply | — | 4.5 V to 5.5 V |
| I/O Compatibility | — | TTL compatible |
| Refresh Requirement | — | None (fully static operation) |