K6X0808C1D-GF55T vs K6X0808C1D-BF70T Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K6X0808C1D-GF55T sa pamamagitan ng Samsung Electro-Mechanics at K6X0808C1D-BF70T sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ NakahandaSamsung Electronics
K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung
K6X0808C1D-BF70T ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K6X0808C1D-GF55T | K6X0808C1D-BF70T |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electronics |
| Kategorya | DRAM | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | SRAM - Asynchronous | SRAM - Asynchronous |
| Laki ng Memory | 256 Kbit | 256 Kbit |
| Organisasyon | 32K x 8 | — |
| Access Time | 55 ns | 70 ns |
| Volte ng Pagbibigay | 5.0 V | — |
| Interface | Parallel | — |
| Process Technology | Full CMOS | CMOS |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging | 28-SOP (450 mil) | 28-SOP |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +85C (TA) |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Active Current | [DATA_NEEDED: active current] | — |
| Data Retention Voltage | Low data retention voltage supported (per datasheet) | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Address Bus Width | 15 bit | 15 bit (A0-A14) |
| Width ng Data Bus | 8 bit | 8 bit (I/O0-I/O7) |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging | Tape & Reel (T suffix) | — |
| Memory Organization | — | 32K x 8 |
| Memory Interface | — | Parallel |
| Write Cycle Time - Word, Page | — | 70 ns |
| Voltage - Supply | — | 4.5 V to 5.5 V |
| I/O Compatibility | — | TTL compatible |
| Refresh Requirement | — | None (fully static operation) |