K6X1008C2D-BF55 vs K6X1008C2D-TF55 Perbandingan

Perbandingan bersamaan detil K6X1008C2D-BF55 dari Samsung Electro-Mechanics dan K6X1008C2D-TF55 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electro-Mechanics
K6X1008C2D-BF55 K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung

K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung

K6X1008C2D-BF55 Obsolete
Samsung Electronics
K6X1008C2D-TF55 K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung

K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung

K6X1008C2D-TF55 ✗ Akhir Hidup

Perbandingan Spesifikasi

Parameter Umum K6X1008C2D-BF55 K6X1008C2D-TF55
Merek Samsung Electro-Mechanics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Obsolete Akhir Hidup
Tipe Memori Asynchronous CMOS Static RAM (SRAM) SRAM - Asynchronous
Memory Organization 128K x 8 bit (1 Mbit) —
Density 1 Mbit —
Access Time 55 ns —
Supply Voltage (VCC) 5 V (single supply) —
Operating Current (ICC) 30 mA typical —
Standby Current (ICC2) [DATA_NEEDED: standby current value] —
Antarmuka Parallel, asynchronous Parallel
Lebar Bus Data 8 bit —
Address Bus Width 17 bit —
Paket 32-SOP-525 (SOP-32) 32-TSOP REVERSE
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja [DATA_NEEDED: operating temperature grade] [DATA_NEEDED: operating temperature range]
Data Retention Voltage Low data retention voltage supported —
Level MSL [DATA_NEEDED: MSL rating] —
Lead-Free Yes (Lead-Free variant) —
Status RoHS Compliant RoHS: Yes (per distributor listing)
Cell Technology 6T CMOS memory cell —
Ukuran Memori — 1 Mbit
Organisasi — 128K x 8
Access Time (tAA) — 55 ns
Supply Voltage (Vcc) — 4.5 V to 5.5 V
Operating Current — 35 mA
Technology — Low Power Full CMOS
Speed Options — 55 ns, 70 ns
Standby Current — [DATA_NEEDED: standby current]
Memory Format — Volatile (SRAM)
Clock Frequency — N/A (asynchronous)

Spek dan Sumber

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