K9F2808Q0B vs K9LCG08U1M Perbandingan
Perbandingan bersamaan detil K9F2808Q0B dari Samsung Electronics dan K9LCG08U1M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
K9F2808Q0B ✗ Akhir Hidup
Perbandingan Spesifikasi
| Parameter Umum | K9F2808Q0B | K9LCG08U1M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Tipe Memori | SLC NAND Flash (parallel) | NAND Flash, MLC |
| Density | 128 Mbit | 64 Gbit (8 GB) |
| Organisasi | 16M x 8 | x8 I/O |
| Operating Voltage (VCC) | 1.7 V to 1.95 V | — |
| Read Access Speed | 50 ns | — |
| Cell Type | SLC (1 bit/cell) | MLC (2 bits per cell) |
| Antarmuka | 8-bit multiplexed address/data | Asynchronous multiplexed NAND I/O |
| Paket | 63-pin TBGA | BGA |
| Temperature Grade | C (commercial), I (industrial) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Typical Read Current (Icc1) | [DATA_NEEDED: Icc1] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Status RoHS | unknown | unknown |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete | — |
| Tegangan Pemuat | — | [DATA_NEEDED: supply voltage] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |