K9F2808Q0B vs K9LCG08U1M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9F2808Q0B disebabkan oleh Samsung Electronics dan K9LCG08U1M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
K9F2808Q0B ✗ Akhir Hayat
Pengandingan Spesifikasi
| Parametr | K9F2808Q0B | K9LCG08U1M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Jenis Ingatan | SLC NAND Flash (parallel) | NAND Flash, MLC |
| Density | 128 Mbit | 64 Gbit (8 GB) |
| Organisasi | 16M x 8 | x8 I/O |
| Operating Voltage (VCC) | 1.7 V to 1.95 V | — |
| Read Access Speed | 50 ns | — |
| Cell Type | SLC (1 bit/cell) | MLC (2 bits per cell) |
| Antaramuka | 8-bit multiplexed address/data | Asynchronous multiplexed NAND I/O |
| Kemasan | 63-pin TBGA | BGA |
| Temperature Grade | C (commercial), I (industrial) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Typical Read Current (Icc1) | [DATA_NEEDED: Icc1] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Status RoHS | unknown | unknown |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete | — |
| Tegangan Pemberi Arus | — | [DATA_NEEDED: supply voltage] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |